In the Universal Flash Storage (UFS) industry for phones, Samsung offers one of the fastest solutions, with its flagship products offering UFS 4.0, read and write speeds of up to 4,200 MB/s and 2,800 MB/s, respectively, and a 176-layer V-NAND construction. Well, its direct rival in the storage market, SK Hynix, has come up with a faster storage solution.
SK Hynix has just announced a UFS 4.1-based storage solution for smartphones that offers a read speed of up to 4,300 MB/s. According to the company, it offers the world’s highest, 321-layer NAND construction. Compared to the previous generation, the company says that the new solution offers 7% higher power efficiency and that it is 0.15mm thinner.
While these improvements seem minor, in the smartphone market, where competition is fierce, every bit counts. SK Hynix will provide the UFS 4.1 product in two capacities: 512GB and 1TB. The company says that it will start shipping the product from the first quarter of next year.
Commenting on the launch of the new product, SK Hynix’s President and Chief Development Officer, Ahn Hyun, said, “We are on track to expand our position as a full-stack AI memory provider in the NAND space by building a product portfolio with AI technological edge.”
